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| = an AMP ----- company Wireless Bipolar Power Transistor, 850 - 960 MHz Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting 35W PH081 o-35 .100*.010 (2.54t.25) I t .230 c5.?4) Absolute` Maximum Ratings at 25C Electrical Characteristics at 25C UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES f.005 ,.HILuNETERS tlsnn, Typical Optimum Device Impedances F(MHz) 600 650 900 q#4 1 .O + j3.7 1.9 + j4.3 1.3 j4.0 ZOAim 2.1 + j0.9 1.6+jO.4j0.7 1.6 + i.i"Tw - 2LOA 960 3.0 + j2.7 1.7 + jO.1 ZIN Specifications Subject to Change Without Notice. Wireless Bipolar Power Transistor, 35W PH0810-35 v2.00 Typical Broadband Performance Curves OUTPUT 75 GAIN-EFFICIENCY l5 6 14 vs FREQUENCY mA POWER vs COLLECTOR VOLTAGE Po,,=35 W Vcc=24 V I,,=200 1,,=200 mA F=900 MHz 11 P,,r0.75 w _ 10 1 * 850 900 ' 25 960 72 14 16 18 20 22 24 26 FREQUENCY (MHz) COLLECTOR VOLTAGE (V) GAIN vs POWER OUTPUT F=900 MHz V,,=24 V 60 , C,, vs COLLECTOR F=l.OMHz VOLTAGE I 24 27 30 33 36 39 42 45 48 5 10 15 v,, W) 20 25 30 P,, Wm) IMD vs PoUT Vcc=24 V I,,=200 mA F1=900 MHz F2=900.1 MHz Claaa A6 9 -15 r IMD vs P,, Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1 Clam A MHz 6 ii z 3 6 B 2 3 0 24 28 32 36 40 44 48 24 26 32 36 40 44 48 0 P&PEP) in dBm P&PEP) in dBm Wireless Bipolar Power Transistor, 35W PH0810-35 v2.00 RF Test Fixture "B P CR1 Cl iii. c2 740 247 (*) 431 1,241 ARTWORK DIMENSIONS IN MILS PAR-l-S Cl c2 C5 C6 CR1 Ll L2 c3 c4 LIST 100 pF ATC SIZE B 5000 pF 50 UF 50 VOLTS lN4245 DIODE lOT/Nll, 20 AWG ON l/8' DIAMETER PH0810-35 5 OHMS l/4 WATT lOT/ND, 22 AWG ON 3.1 OHM l/4 WATT ROGERS 6010,5 ,025' THICK, ER = 1085 Ql Rl RLl BOARD TYPE Specifications Subject to Change Wiiout Notice. |
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